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STW45NM60
N-channel 650V@Tjmax - 0.09 - 45A - TO-247 MDmeshTM Power MOSFET
General features
Type STW45NM60

VDSS (@Tjmax) 650V
RDS(on) < 0.11
ID 45A
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields TO-247
Description
The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor's products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STW45NM60 Marking W45NM60 Package TO-247 Packaging Tube
December 2006
Rev 7
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www.st.com 12
Contents
STW45NM60
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW45NM60
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VGS ID ID IDM (1) PTOT
(2)
Absolute maximum ratings
Parameter Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 45 28 180 417 3.33 15 -65 to 150 150 Unit V A A A W W/C V/ns C C
dv/dt
Peak diode recovery voltage slope Storage temperature Max. operating junction temperature
Tstg Tj
1. Pulse width limited by safe operating area 2. ISD < 45A, di/dt < 400A/s, VDD < 80% V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature for soldering purpose Value 0.3 30 300 Unit C/W C/W C
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) Max value 15 850 Unit A mJ
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Electrical characteristics
STW45NM60
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 22.5A 3 4 0.09 Min. 600 10 100 100 5 0.11 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 22.5A Min. Typ. Max. 15 3800 1250 80 340 Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 480V f=1 MHz Gate DC Bias = 0 test signal level = 20mV open drain VDD = 400V, ID = 45A, VGS = 10V Figure 14
pF
RG Qg Qgs Qgd
1.4 96 31 43 134
nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STW45NM60
Electrical characteristics
Table 6.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 250V, ID = 22.5A RG = 4.7 VGS = 10V Figure 13 VDD = 400V, ID = 45A, RG = 4.7, VGS = 10V Figure 13 Min. Typ. 30 20 16 23 40 Max. Unit ns ns ns ns ns
Table 7.
Symbol ISD ISDM VSD
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, VGS = 0 ISD = 45A, di/dt = 100A/s, VDD = 100 V, Tj = 25C Figure 15 ISD = 45A, di/dt = 100A/s, VDD = 100 V, Tj = 150C Figure 15 508 10 40 650 14 43 Test conditions Min. Typ. Max. 45 180 1.5 Unit A A V ns C A ns C A
trr Qrr IRRM trr Qrr IRRM
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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Electrical characteristics
STW45NM60
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static-drain source on resistance
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STW45NM60 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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Test circuit
STW45NM60
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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STW45NM60
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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Package mechanical data
STW45NM60
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STW45NM60
Revision history
5
Revision history
Table 8.
Date 05-Mar-2005 16-May-2006 18-Dec-2006
Revision history
Revision 5 6 7 Changes Complete document with curves The document has been reformatted Updates curves:Figure 1., Figure 4. and Figure 6.
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STW45NM60
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